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mil-prf-19500/354h 5 march 2002 superseding mil-prf-19500/354g 23 april 2001 performance specification semiconductor device, transistor, pnp, silicon, low-power types 2n2604, 2n2604ub, 2n2605 and 2n2605ub jan, jantx, jantxv, and jans, janhc, jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for pnp, silic on, low-power transistors for use in low noise-level amplifier applications. four leve ls of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in mil-prf-19500. 1.2 physical dimensions . see figure 1 (to-46), figure 2 (ub), and figures 3 and 4 die. 1.3 maximum ratings . type p t (1) t a = +25 c v cbo v ebo v ceo i c t j and t stg r ja mw v dc v dc v dc ma dc c c/w 2n2604, ub 400 80 6 60 30 -65 to +200 437 2n2605, ub 400 70 6 60 30 -65 to +200 437 (1)derate linearly at 2.28 mw/ c above t a = +25 c. 1.4 primary electr ical characteristics . h fe1 h fe |h fe | c obo v be(sat) v ce(sat) v ce =5 v dc i c =10 dc v ce =5 v dc i c =1 ma dc f=1 khz v ce =5 v dc i c =500 a dc f=30 mhz v cb =5 v dc i e =0 100 khz f 1 mhz i c =10 ma dc i b =500 a dc i c =10 ma dc i b =500 a dc min max 2n2604 40 120 2n2605 100 300 2n2604 60 180 2n2605 150 450 1 8 pf 6 v dc 0.7 0.9 v dc 0.3 amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound the documentation and process conv ersion measures necessary to comply with this document shall be completed by 5 april 2002. beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: defense supply center columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43216-5000, by using t he standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/354h 2 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards and handbooks . the following specifications, standards and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor device s, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (d pm - dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. 3.4 interface and physical dimensions . the interface and physical dimens ions shall be as specified in mil-prf-19500 and on figure 1 (to-46), figur e 2 (ub), and on figures 3 and 4 die.
mil-prf-19500/354h 3 dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 5 ld .016 .021 0.41 0.53 6 ll .500 1.750 12.70 44.45 6 lu .016 .019 0.41 0.48 6 l1 .050 1.27 6 l2 .250 6.35 6 q .040 1.02 4 tl .028 .048 0.71 1.22 3, 8 tw .036 .046 0.91 1.17 3, 8 r .010 0.25 9 45 tp 45 tp 5 notes: 1. dimensions are in inches. lead 1 is em itter, lead 2 is base, and lead 3 is collector. 2. metric equivalents are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. leads at gauge plane .054 +.001 -.000 inch (1.37 +0. 03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximu m material condition (mmc) relative to tab at mmc. the device may be measured by direct met hods or by the gauge and gauging procedure. 6. symbol lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. 7. lead number three is electrically connected to case. 8. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 9. symbol r applied to both inside corners of tab. 10. in accordance with ansi y14.5m, diameters are equivalent to x symbology. figure 1. physical dimensions - to-46 .
mil-prf-19500/354h 4 dimensions symbol inches millimeters note min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 .024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 2. physical dimens ions, surface mount (ub version) .
mil-prf-19500/354h 5 1. chip size .015 x .019 inch .001 inch, (0.381 x 0.483 0.0254 mm). 2. chip thickness .010 .0015 inch, (0.254 0.381). 3. top metal aluminum 15,000 ? minimum, 18,000 ? nominal. 4. back metal a. gold 2,500 ? minimum, 3,000 ? nominal. b. eutectic mount - no gold. 5. backside collector. 6. bonding pad b = .003 inch, (0.076 mm), e = .004 inch, (0.102 mm) diameter. 7. passivation si 3 n 4 (silicon nitride) 2k ? min, 2.2k ? nom. figure 3. janhc and jankc a-version die dimensions .
mil-prf-19500/354h 6 die size: .018 x .018 inch (0.457 x 0.457 mm). die thickness: .008 .0016 inch (0.203 0.406 mm). base pad: .0025 inch (0.0635 mm) diameter. emitter pad: .003 inch (0.076 mm) diameter. back metal: gold, 6500 1950 ang. top metal: aluminum, 19500 2500 ang. back side: collector. glassivation: sio 2 , 7500 1500 ang. figure 4. janhc and jankc b-version die dimensions .
mil-prf-19500/354h 7 3.4.1 lead finish . lead finish shall be solderable in accordanc e with mil-prf-19500, mil-std-750 and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.5 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table i. 3.6 electrical test requirements . the electrical test requirements s hall be the subgroups specified in table i herein. 3.7 marking . marking shall be in accordance with mil-prf-19500. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in a ccordance with mil-prf-19500 and as specified herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil-prf-19500. * 4.2.2 group e qualification . group e inspection shall be performed herein for qualification or requalification only. in case qualification was rewarded to a prior revision of the associated specification that did not request the performance of table ii tests, the tests specified in t able ii herein shall be performed by the first inspection lot processed to this revision to maintain qualification.
mil-prf-19500/354h 8 * 4.3 screening (jans, jantx, and jantxv levels only) . screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following m easurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. measurement screen (see table iv of mil-prf-19500) jans level jantx and jantxv levels 3c thermal impedance method 3131 of mil-std-750. thermal impedance method 3131 of mil-std-750. 9 i cbo1 and h fe2 not applicable 10 24 hours minimum 24 hours minimum 11 i cbo1 ; h fe2 ; ? i cbo1 = 100 percent or 2 na dc, whichever is greater; ? h fe2 = 15 percent change of initial value. i cbo1 and h fe2 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; ? i cbo1 = 100 percent or 2 na dc, whichever is greater; ? h fe2 = 15 percent change of initial value. subgroup 2 of table i herein; ? i cbo1 = 100 percent or 2 na dc, whichever is greater; ? h fe2 = 25 percent change of initial value. 4.3.1 power burn-in conditions . power burn-in conditions are as follows: t a = room ambient as defined in the general requirements of 4.5 of mil-std-750, p t = 400 mw see 1.3 herein. 4.3.2 screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500, "discrete semiconductor die/chip lot accept ance". burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified herein. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) of mil-prf-19500 and 4.4.2.1 herein. electrical measurements (end-points) and delta requirements shall be in accor dance with group a, subgroup 2 and 4.5.3 herein, delta requirements only apply to subgroups b4, and b5. see 4.4.2.2 herein for jan, jantx, and jantxv group b testing. electrical measurements ( end-points) and delta requirements for ja n, jantx, and jantxv shall be after each step in 4.4.2.2 herein and shall be in accordance with group a, subgroup 2 and 4.5.3 herein.
mil-prf-19500/354h 9 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500. subgroup method condition * b4 1037 v cb = 10 v dc, 2,000 cycles. * b5 1027 (note: if a failure occurs, resubmissi on shall be at the test conditions of the original sample.) v cb = 10 v dc, p d 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum, sample size in accordance with table via of mil-prf-19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours minimum, sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sa mple at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method condition 1 1039 steady-state life: test condition b, 340 hours minimum, v cb = 10 - 30 v dc, power shall be applied to achieve p t 400 mw, n = 45 devices, c = 0 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life ( non-operating), t = 340 hours, t a = +200 c. n = 22, c = 0. 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be se lected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil-prf- 19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical meas urements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.3 herei n; delta requirements only apply to subgroup c6.
mil-prf-19500/354h 10 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500. subgroup method condition c2 2036 test condition e (not applicable to ub). c6 1026 1,000 hours at v cb = 10 - 30 v dc; power shall be applied p t 400 mw. 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e, not applicable for ua and ub devices. * c5 3131 r jc (see 1.3). c6 not applicable. 4.4.4 group e inspection . group e inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in appendix e, table ix of mil-prf-19500 and as specified herein. el ectrical measurements (end- points) and delta measurements shall be in accordance wi th the applicable steps of 4.5.3 and table i, subgroup 2 herein; except, z jx need not be performed. 4.5 methods of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurements shall be as specified in section 4 of mil-std-750. 4.5.2 noise figure . the noise figure shall be measured using commercially available test equipment and its associated standard test procedures. 4.5.3 delta requirements . delta requirements shall be as specified below: step inspection mil-std-750 symbol limit unit method conditions 1 collector-base cutoff current 3036 bias condition d, v cb = 50 v dc ? i cb01 (1) 100 percent of initial value or 5 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 5 v dc; i c = 500 ua dc; pulsed see 4.5.1 ? h fe2 (1) 25 percent change from initial reading. (1) devices which exceed the group a limits for this test shall not be accepted.
mil-prf-19500/354h 11 table i. group a inspection . mil-std-750 limit inspection 1 / method conditions symbol min max unit subgroup 1 2 / visual and mechanical examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 4 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 collector - base leakage current 2n2604 2n2605 3036 bias condition d; v cb = 80 v dc v cb = 70 v dc i cbo2 10 a dc collector - emitter breakdown voltage 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1) v (br)ceo 60 v dc emitter - base cutoff current 3061 bias condition d; v eb = 6 v dc i ebo2 10 a dc collector - base cutoff current 3036 bias condition d; v cb = 50 v dc i cbo1 10 na dc emitter - base cutoff current 3061 bias condition d; v eb = 5 v dc i ebo 2 na dc see footnotes at end of table.
mil-prf-19500/354h 12 table i. group a inspection - continued. mil-std-750 limit inspection 1 / method conditions symbol min max unit subgroup 2 - continued. collector - emitter cutoff current 3041 bias condition c; v ce = 50 v dc i ces 10 na dc forward current transfer ratio 2n2604 2n2605 3076 v ce = 5 v dc; i c = 10 a dc h fe1 40 100 120 300 forward current transfer ratio 2n2604 2n2605 3076 v ce = 5 v dc; i c = 500 a dc h fe2 60 150 180 450 forward current transfer ratio 2n2604 2n2605 3076 v ce = 5 v dc; i c = 10 ma dc h fe3 40 100 160 400 base - emitter voltage (saturated) 3066 test condition a; i c = 10 ma dc; i b = 500 a dc v be(sat) 0.7 0.9 v dc collector - emitter voltage (saturated) 3071 i c = 10 ma dc; i b = 500 a dc v ce(sat) 0.3 v dc subgroup 3 high-temperature operation: t a = +150 c collector - base cutoff current 3036 bias condition d; v cb = 50 v dc i cbo2 5 a dc low-temperature operation: t a = -55 c forward current transfer ratio 2n2604 2n2605 3076 v ce = 5 v dc; i c = 10 a dc h fe4 15 30 see footnotes at end of table.
mil-prf-19500/354h 13 table i. group a inspection - continued. mil-std-750 limit inspection 1 / method conditions symbol min max unit subgroup 4 small-signal short- circuit input impedance 2n2604 2n2605 3201 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h ie 1 2 10 20 k ? k ? small-signal open- circuit reverse-voltage transfer ratio 3211 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h re 10 x 10 -4 small-signal open- circuit output admittance 2n2604 2n2605 3216 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h oe 40 60 mhos mhos small-signal short- circuit forward-current transfer ratio 2n2604 2n2605 3206 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h fe 60 150 180 450 magnitude of common emitter small-signal short-circuit forward- current transfer ratio 3306 v ce = 5 v dc; i c = 0.5 ma dc; f = 30 mhz |h fe | 1 8 open circuit output capacitance 3236 v cb = 5 v dc; i e = 0; 100 khz f 1 mhz c obo 6 pf noise figure 3246 v ce = 5 v dc; i c = 10 a dc; r g = 10 k ? ; f = 100 hz f 1 5 db noise figure 3246 v ce = 5 v dc; i c = 10 a dc; r g = 10 k ? ; f = 1 khz f 2 3 db noise figure 3246 v ce = 5 v dc; i c = 10 a dc; r g = 10 k ? ; f = 10 khz f 3 3 db 1 / for sampling plan unless otherwise specified see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the ent ire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil-prf-19500/354h 14 table ii. group e inspection (all qualit y levels) - for qualification only. inspection mil-std-750 qualification method conditions * subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devices c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see group a, subgroup 2 herein. * subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements see group a, subgroup 2 herein. subgroups 3, 4, 5, 6, and 7 not applicable * subgroup 8 45 devices c = 0 reverse stability 1033 condition a for devices 400 v dc. condition b for devices < 400 v dc.
mil-prf-19500/354h 15 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use. the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation and, if required, the specified issue of individual documents referenced (see 2.2.1). c. lead finish (see 3.4.1). d. type designation and product assurance level. e. packaging requirements (see 5.1). 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for incl usion in qualified manufacturer?s list qml-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: ds cc/vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with the applicable letter version (example, janhca2n2604) will be identified on the qpl. janc ordering information manufacturer pin 43611 34156 2n2604 2n2605 janhca2n2604, jankca2n2604 janhca2n2605, jankca2n2605 janhcb2n2604, jankcb2n2604 janhcb2n2605, jankcb2n2605 * 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue.
mil-prf-19500/354h 16 custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2568) nasa - na dla - cc review activities: army - ar, av, mi navy - as, mc air force - 19
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/354h 2. document date 5 march 2002 3. document title semiconductor device, transistor, pnp, silico n, low-power, types 2n2604, 2n2604ub, 2n2605 and 2n2605ub jan, jantx, jantxv, and jans, janhc, jankc 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692- 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus, attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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